| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing device capable of reducing damage to a semiconductor wafer and highly precisely etching. SOLUTION: The semiconductor manufacturing device has a treatment chamber 1 for treating a sample, a plasma generating power source device 3 for generating plasma 5 in the chamber 1, a high frequency power source device 7 for applying a high frequency to a sample base 6 provided in the chamber 1, and a control means 9 for controlling the plasma generating power source device 3 or the high frequency power source device 7 based on a recipe setting output strength and an output range for each treatment step. When the treatment steps are switched over, the control means 9 compares settings for the processing step in treatment and for a next step and then switches over either the output strength or the output range first. COPYRIGHT: (C)2006,JPO&NCIPI
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