DRY ETCHING METHOD AND DRY ETCHING APPARATUS

摘要

PROBLEM TO BE SOLVED: To suppress notches in etching a processing object having a layer to be etched made of a silicon-based material that is formed on an etching stop layer. SOLUTION: A substrate 12 comprises the layer to be etched 22 made of the silicon-based material formed on the etching stop layer 21. An SF6/C4F8gas is introduced as an etching gas to generate a plasma gas and etch a part that is exposed from a resist mask 23 on the layer to be etched 22. The sidewall of a groove and a hole is formed with a sidewall protective layer 24. COPYRIGHT: (C)2006,JPO&NCIPI