| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a phase-change storage cell, and to provide a method of manufacturing the same. <P>SOLUTION: A phase-change storage cell comprises a lower interlayer insulating film formed on a semiconductor substrate and a lower conductivity plug penetrating the lower interlayer insulating film. The lower conductivity plug is in contact with a phase transformation substance pattern provide on the lower interlayer insulating film. The phase-change substance pattern and the lower interlayer insulating film are covered with an upper interlayer insulating film. The phase-change substance pattern is directly, in contact with a conductive film pattern in a plate line contact hole penetrating the upper interlayer insulating film. There is also provided the method of manufacturing the phase-change storage cell. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
