| 摘要 |
<P>PROBLEM TO BE SOLVED: To form a required skirt-like inclined part in a sidewall portion of a permanent resist layer by using parallel light exposure in a level of recommended exposure light quantity obtained with the use of a parallel light exposure device under an appropriate developing condition that no resist development residue remains. <P>SOLUTION: A mask film 14 is disposed on an uncured permanent resist layer 13 comprising a negative photosensitive resist, and a light-transmitting light diffusion sheet 15 is disposed on the mask film 14 to carry out parallel light exposure through the light diffusion sheet 15 to cure the photosensitive resist in an exposed portion. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
