| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a transparent conductive thin film which is remarkably flat, low in resistance and is amorphous, an oxide sintered compact for stably forming the transparent conductive thin film and a sputtering target using the same. <P>SOLUTION: The oxide sintered compact comprises indium, tungsten, zinc and oxygen, tungsten in the amount of W/In of 0.004-0.034, zinc in the amount of Zn/In of 0.005-0.032 and silicon in the amount of Si/In of 0.007-0.052 each by the number of atoms, and has an indium oxide crystalline phase of a bixbyite structure as a main phase. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
