SEMICONDUCTOR APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor apparatus in which a resistance in a drain (or source) region decreasing together with advance of fining is kept to a specified resistance value or more. SOLUTION: On a semiconductor substrate 11, n+-type semiconductor regions 13A, 14A and 14C are formed. The n+-type semiconductor region 14A is formed apart from the n+-type semiconductor region 13A, and the n+-type semiconductor region 14C is formed apart from the n+-type semiconductor region 14A. On the semiconductor substrate 11 between the n+-type semiconductor region 14A and the n+-type semiconductor region 14C, an n--type semiconductor region 14B is formed whose electric resistance is higher than that of the n+-type semiconductor region. Further, a gate insulating film 15 and a gate electrode 16 are formed, and a silicide layer 17 is formed on the surface of the n+-type semiconductor region 13A, the surface of the n+-type semiconductor region 14A, the surface of the n+-type semiconductor region 14C and the gate electrode 16. The length in a channel width direction of the n--type semiconductor region 14B is shorter than a channel width. COPYRIGHT: (C)2006,JPO&NCIPI