DEVICE AND METHOD FOR FORMING SEMICONDUCTOR FILM

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor film forming device and a semiconductor film forming method by which a semiconductor crystal film is formed at a constant growth rate without being contaminated with dust or the like and the process efficiency of the crystal film is improved, when the crystal film is formed by supplying a source gas to the surface of a heated substrate to be processed. SOLUTION: Substrates 14 to be processed are supported and fixed on disc-shape susceptors 16 so that they may be spaced and opposed from and to one another. The source gas is introduced to a gap between the opposed susceptors 16 from the center of each of the susceptors. The introduced source gas is flowed from the center of each susceptor 16 toward the edge of its circumference by rotating the disc-shape susceptors 16 and is used for film forming processing on the substrates 14 to be processed which are heated to a high temperature. COPYRIGHT: (C)2006,JPO&NCIPI