| 摘要 |
PROBLEM TO BE SOLVED: To prevent a reduction of a write current and an erroneous write on a magnetic memory. SOLUTION: A magnetic random access memory comprises a magnetic resistance effect element MTJ; a write line WWL for use in generating a magnetic field for data write into the magnetic resistance effect element MTJ; and a strain layer 18 which is disposed corresponding to the magnetic resistance effect element MTJ, and has a function of physically deforming when data is written, for controlling a magnitude of an inverse magnetic field of the magnetic resistance effect element MTJ. COPYRIGHT: (C)2006,JPO&NCIPI
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