| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor having a constitution capable of clarifying a guide with respect to the limit of short channelization and satisfying both of high ON/OFF ratio and high-speed operation. SOLUTION: The field effect transistor is provided with a source electrode 2 and a drain electrode 3 which are formed while being contacted with an active layer 4 with a distance of a channel length, and a gate electrode 1 formed between the source electrode 2 and the drain electrode 3. The channel length is Lμm, and the thickness of a region is d nm, through which a current flows so that the distance between the source-drain becomes shortest among active layers 4. When a desired ON/OFF ratio is shown by x, L and d suffice the condition of a formula (1). COPYRIGHT: (C)2006,JPO&NCIPI
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