| 摘要 |
PROBLEM TO BE SOLVED: To provide a switch integrated circuit device, specifically, a switch integrated circuit device for integrating a depression type HEMT (High Electron Mobility Transistor) and an enhancement type HEMT on the same substrate, and a manufacturing method thereof. SOLUTION: A first gate electrode of the depression type HEMT is provided on a second non-doped layer, and a second gate electrode of the enhancement type HEMT is provided on a first non-doped layer. The second non-doped layer can be etched with good reproducibility by selection etching with the first non-doped layer. The first and second gate electrodes are each have a Pt-embedded gate structure, and the vapor-deposition thickness of Pt and the thickness of each of the first and second non-doped layers are optimized to acquire a pinch-off voltage value of each of the HEMTs. COPYRIGHT: (C)2006,JPO&NCIPI
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