发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To realize reliable capacitor structure whereby the surface roughness in the upper electrode of capacitor structure is controlled while securing excellent capacitor characteristics. SOLUTION: An upper electrode layer 29 is processed into two or more electrode shapes by lithography and following dry etching. After carrying out pattern formation of two or more upper electrodes 31, RTA treatment is performed at the treatment temperature within the range of 400°C-1,000°C and at the value of oxygen flow rate within the range of 0.1 L/minute-100 L/minute, and then annealing treatment is continuously performed for 60 minutes at the treatment temperature of 650°C in oxygen atmosphere. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006165128(A) 申请公布日期 2006.06.22
申请号 JP20040351904 申请日期 2004.12.03
申请人 FUJITSU LTD 发明人 TAKAMATSU TOMOHIRO;FUJIKI MITSUSHI
分类号 H01L27/105;H01L21/8246 主分类号 H01L27/105
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