| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory and its data rewriting method in which stable reference voltage can be obtained, and accurate read-put of stored data can be performed. SOLUTION: The memory comprises a bit line selecting circuit 27 in which a first connection state in which a reference bit line RBLA is connected to a a pre-sense-amplifier 21 and a reference bit line RBLB is connected to a pre-sense-amplifier 22, and a second bit line connection state in which the reference bit line RBLA is connected to a a pre-sense-amplifier 22 and the reference bit line RBLB is connected to a pre-sense-amplifier 21 are selected alternately, based on bit line selecting signals SELA, SELB; and rewrite circuits 29, 30 for rewriting logic "1" for a reference cell storing logic "0" out of reference cells RCA, RCB and rewriting logic "0" for a reference cell storing logic "1" out of reference cells RCA, RCB, based on normal output and inversion output of a first latch circuit 25B. COPYRIGHT: (C)2006,JPO&NCIPI
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