| 摘要 |
A semiconductor device includes a device isolation structure formed in a substrate so as to define a device region and a semiconductor device formed in the device region, wherein the device isolation structure includes a device isolation trench formed in the substrate so as to define the device region and a device isolation insulator filling the device isolation trench, the device isolation insulator including a lower part and an upper part, a stepped part being formed between the lower part and the upper part.
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