| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that is nonvolatile and easily manufactured, and has a rewritable storage circuit. <P>SOLUTION: The semiconductor device has a plurality of transistors, conductive layers acting as source lines or drain lines of the transistors, a storage element provided on one of the plurality of transistors, and a conductive layer acting as an antenna; wherein the storage element includes a first conductive layer, an organic compound layer or a phase change layer, and a second conductive layer stacked in this order, and the conductive layer acting as the antenna and the conductive layers acting as the source lines or the drain lines of the transistors are provided on the same layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
