| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new method of manufacturing a field effect transistor. <P>SOLUTION: Prior to forming an amorphous oxide layer on a substrate, the substrate surface is irradiated with ultraviolet rays in an ozone atmosphere, is irradiated with a plasma, or is cleaned with a chemical solution containing hydrogen peroxide. Alternatively, a process of forming an active layer, containing an amorphous oxide, is performed in an atmosphere containing at least one selected from the group consisting of ozone gas, nitrogen oxide gas and the like. Alternatively, heat treatment is performed at a temperature higher than the deposition temperature of an amorphous oxide layer after forming the amorphous oxide layer on the substrate. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
