PHASE-CHANGE MEMORY DEVICE COMPRISING PHASE-CHANGE SUBSTANCE LAYER INCLUDING PHASE-CHANGE NANO PARTICLE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a phase-change memory device comprising a phase-change substance layer including phase-change nano particles and to provide a method for manufacturing the same.

SOLUTION: The phase-change memory device comprises a first electrode 40 and a second electrode 48 arranged in opposition to each other, a phase-change substance layer 46 interposed between the first electrode and the second electrode and including phase-change nano particles, and a switching device 30 electrically linked with the first electrode.

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