| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase the arrangement density of through electrodes in the horizontal plane of a substrate. <P>SOLUTION: In a silicon substrate 101, a through hole 103 which is extended through the substrate 101 is formed. Then, an insulation film 105 is embedded in the through hole 103, and a plurality of columnar through plugs 107 are formed inside the insulation film 105. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
