发明名称 |
Frequency conversion circuit for direct conversion receiving, semiconductor integrated circuit therefor, and direct conversion receiver |
摘要 |
A rectangular parallelepiped p-channel MOS transistor 21 having a height of H<SUB>B </SUB>and a width of W<SUB>B </SUB>is formed on a silicon substrate, and a gate oxide film is formed on a part of the top surface and the side surface of the p-channel MOS transistor 21. A source and a drain are formed on both sides of a gate electrode 26 to form a MOS transistor. The MOS transistor configures a direct conversion receiving circuit. Thus, an error between an I signal and a Q signal in a direct conversion receiving frequency conversion circuit can be reduced.
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申请公布号 |
US2006131617(A1) |
申请公布日期 |
2006.06.22 |
申请号 |
US20050560310 |
申请日期 |
2005.12.12 |
申请人 |
NISHIMUTA TAKEFUMI |
发明人 |
NISHIMUTA TAKEFUMI |
分类号 |
H01L27/148;H01L21/336;H01L21/8238;H01L27/092;H01L29/78;H03D7/12;H03D7/14;H04B1/30 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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