发明名称 STRUCTURE OF SEMICONDUCTOR SUBSTRATE INCLUDING TEST ELEMENT GROUP WIRING
摘要 A structure of test element group wiring includes, in addition to an electrode on a substrate including one or more layers of insulating films, and real wirings electrically connected to the electrode, includes dummy wirings electrically isolated from the electrode and having a portion of the same shape as the real wiring. The dummy wirings are disposed at a predetermined constant distance, adjacent to the real wirings or to each other, so that the wiring rate of the real wiring relaxes the concentration difference of patterns. The distance between the real wirings is sufficient to perform pattern analysis using the OBIRCH method.
申请公布号 US2006131578(A1) 申请公布日期 2006.06.22
申请号 US20060348253 申请日期 2006.02.07
申请人 ROHM CO., LTD. 发明人 NASUNO TAKASHI;TSUDA HIROSHI
分类号 G03F1/08;H01L23/58;G03F1/00;G03F1/68;H01L21/3205;H01L21/66;H01L21/768;H01L21/822;H01L23/52;H01L23/522;H01L27/04;H01L31/20 主分类号 G03F1/08
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