A HEMT type device which has pillars with vertical walls perpendicular to a substrate. The pillars are of an insulating semiconductor material such as GaN. Disposed on the side surfaces of the pillars is a barrier layer of a semiconductor material such as AlGaN having a bandgap greater than that of the insulating material of the pillars. Electron flow is confined to a narrow channel at the interface of the two materials. Suitable source, drain and gate contacts are included for HEMT operation.
申请公布号
WO2006031654(A3)
申请公布日期
2006.06.22
申请号
WO2005US32198
申请日期
2005.09.09
申请人
NORTHROP GRUMMAN CORPORATION;CLARKE, ROWLAND, C.;AUMER, MICHEL, E.