TRANSISTORS HAVING BURIED N-TYPE AND P-TYPE REGIONS BENEATH THE SOURCE REGION AND METHODS OF FABRICATING THE SAME,申请号CA20052590626-传众专利搜索

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发明名称	TRANSISTORS HAVING BURIED N-TYPE AND P-TYPE REGIONS BENEATH THE SOURCE REGION AND METHODS OF FABRICATING THE SAME
摘要
申请公布号	CA2590626(A1)	申请公布日期	2006.06.22
申请号	CA20052590626	申请日期	2005.10.04
申请人	CREE, INC.	发明人	SRIRAM, SAPTHARISHI
分类号	H01L29/08;H01L29/812	主分类号	H01L29/08
代理机构		代理人
主权项
地址

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