| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor laser product by means of screening with little degradation in ESD resistance. SOLUTION: In a screening step S106-A, current is applied in a step S106a to assemblies 37a and 37b for a predetermined period at a test temperature higher than an upper limit temperature with proper operation guaranteed for the semiconductor laser product to illuminate the assemblies 37a and 37b with the optical output of a saturated optical output P<SB>sat</SB>or lower at the upper-limit operation guaranteed temperature. The applied current is larger than that causing the assemblies to generate the saturated optical output P<SB>sat</SB>at the test temperature and less than 150 mA. Then, after the current is applied to the assemblies 37a and 37b, the electric characteristics of the assemblies 37a and 37b are measured in a step S106b. If the measurement shows that the assemblies 37a and 37b are good in a step S106c, they are considered to have passed the electric measurement, and good semiconductor laser products are obtained. COPYRIGHT: (C)2006,JPO&NCIPI
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