发明名称 |
Method for fabricating semiconductor device having stacked-gate structure |
摘要 |
A method for fabricating a semiconductor a semiconductor device having a stacked-gate structure. A polysilicon layer is formed overlying a substrate, which is insulated from the substrate by a dielectric layer. A metal-flash layer is formed overlying the polysilicon layer, and then a tungsten nitride layer is formed overlying the titanium layer. The tungsten nitride layer is annealed using nitrogen and hydrogen gases. A tungsten layer and a cap layer are successively formed overlying the tungsten nitride layer.
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申请公布号 |
US2006134913(A1) |
申请公布日期 |
2006.06.22 |
申请号 |
US20060338579 |
申请日期 |
2006.01.23 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
HO TZU-EN;CHANG CHIH-HAO;WU CHANG-RONG;SU KUO-HUI |
分类号 |
H01L21/44;H01L21/28;H01L21/302;H01L21/4763;H01L29/49 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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