发明名称 |
Semiconductor device having trench interconnection and manufacturing method of semiconductor device |
摘要 |
A semiconductor device includes a first interconnection layer and a interlayer insulating layer. The first interconnection layer is formed on a upper side of a substrate, and includes a first interconnection. The interlayer insulating layer is formed on the first interconnection layer, and includes a via connected with the first interconnection at one end of the via and a second interconnection connected with the via at another end of the via. The interlayer insulating layer has a relative dielectric constant lower than that of a silicon oxide film. An upper portion of the interlayer insulating layer includes a silicon-oxide film, a silicon nitride film and a silicon oxide film in order from a lower portion.
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申请公布号 |
US2006131754(A1) |
申请公布日期 |
2006.06.22 |
申请号 |
US20050317399 |
申请日期 |
2005.12.23 |
申请人 |
NEC CORPORATION |
发明人 |
OHTAKE HIROTO;TAGAMI MASAYOSHI;TADA MUNEHIRO;HAYASHI YOSHIHIRO |
分类号 |
H01L23/48;H01L21/3065;H01L21/311;H01L21/314;H01L21/316;H01L21/768;H01L23/532 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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