SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device includes P-type and N-type thin film transistors. At least one of the N-type thin film transistors has an offset gate structure. At least one of the P-type thin film transistors has an LDD structure. The P-type high-concentration impurities layer constituting at least one P-type thin film transistor is formed on a semiconductor layer excluding the area below the gate electrode and the side wall spacer and contains P-type impurities of higher concentration together with the impurities contained in the N-type low-concentration impurities layer and the N-type high-concentration impurities layer constituting the N-type thin film transistor.