| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate manufacturing method capable of flattening a substrate surface by restraining cracks, notches, and saw marks on the substrate surface, and a semiconductor substrate. SOLUTION: While an ingot 3 is transferred to a wire line 21 and grinding liquid 23 is supplied between the ingot 3 and the wire line 21, the ingot 3 is cut. At that time, a time average value of feed rate at the time of cutting a first region 3d of the ingot 3 positioned on the opposite side of a cutting start point D<SB>1</SB>relative to a central axis O of the ingot 3 is made smaller than a time average value of feed rate at the time of cutting a second region 3c of the ingot 3 positioned on the cutting start point D<SB>1</SB>side relative to the central axis O of the ingot 3. This can restrain cutting resistance small and smoothly cut the first region 3d even if supply of the grinding liquid 23 into cutting portions is comparatively small. COPYRIGHT: (C)2006,JPO&NCIPI |
