MEMORY, MAGNETIC HEAD, MAGNETIC SENSOR, AND METHOD OF MANUFACTURING THEM

摘要

PROBLEM TO BE SOLVED: To provide a memory element which has a structure wherein an insulating film formed around the memory element is formed thick so as to have enough insulating properties, and insulation around the memory element can be kept high enough even if the memory element is more microminiaturized. SOLUTION: A memory cell is formed of the memory element 20, and a current is made to flow through the memory element 20 in the direction of its thickness to record or read out information. The insulating layer 22 which constrains a current path in the memory element 20 is provided around the memory element 20 of the memory cell through a process of subjecting a coating film to heat treatment. COPYRIGHT: (C)2006,JPO&NCIPI