| 摘要 |
A chalcogenide random access memory (CRAM) is provided. The CRAM includes a substrate, a first dielectric layer, a bottom electrode, a top electrode, a second dielectric layer, a modified chalcogenide spacer and an un-modified chalcogenide thin film. The first dielectric layer is disposed on the substrate and the bottom electrode is located inside the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer and it has at least one opening exposing the bottom electrode. The modified chalcogenide spacer is disposed on the sidewall of the opening exposing portion of the bottom electrode. The top electrode is disposed on the bottom electrode. The un-modified chalcogenide thin film is disposed between the modified chalcogenide spacer and the top electrode and also disposed between the bottom electrode and the top electrode. The modified chalcogenide spacer has a better etching resistivity than the un-modified chalcogenide thin film.
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