Deposition of single layers, on a flat or structured substrate, uses a limiter to stop the deposition automatically when the layer is closed

摘要

The process to deposit at least one layer on to a substrate, containing at least one initial component, uses a process chamber where there is a cyclic and alternating action between two start materials where the first start material contains the first component. The start material is a gas, fed into the process chamber so that in each cycle only one layer is deposited of the first component. A limiter is introduced into the process chamber together with the first start material, or at an offset time, so that the deposition of the first component on the substrate ends automatically when the first layer is closed. The growth of a second layer is possible when the cycle ends. The layers are deposited on a substrate with a flat or structured surface using components of metal, oxygen, nitrogen or carbon. The start material contains ruthenium, and the limiter is octane or iso octane or a hydrocarbon.