| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a fine pattern with a preferable profile by preventing influences of an immersion liquid to be used for liquid immersion lithography on a resist film. <P>SOLUTION: A resist film 102 is formed on a substrate 101. Subsequently, a barrier film 103 containing a basic compound such as dicyclohexylamine is formed on the formed resist film 102. Then, with an immersion liquid 104 containing cesium sulfate laid on the barrier film 103, the resist film 102 is selectively irradiated with exposure light 105 for pattern exposure through the barrier film 103. After the pattern exposure, the barrier film 103 is removed, and the resist film 102 subjected to the pattern exposure is developed to form a resist pattern 102a having a preferable profile. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
