DIODE WITH LOW JUNCTION CAPACITANCE

摘要

A diode (250) is comprised of a doped region (252) formed with a first dopant of a first conductivity type. In addition, the diode further comprises a substrate (254) doped with a second dopant of a second conductivity type opposite of the first conductivity type. The lightly doped substrate, instead of a well, abuts the doped region for minimizing a junction capacitance of the diode. Such a diode is especially advantageous for ESD (electro-static discharge) protection of high speed integrated circuits.