| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device using a thermally stable gate insulating film in which high relative dielectric constant is secured. SOLUTION: After a hydrogen containing HfO<SB>2</SB>22A is formed on a substrate 20, a silicon containing HfO<SB>2</SB>film 22 is formed by dispersing silicon in the HfO<SB>2</SB>film 22A from the substrate 20 by performing thermal treatment on the film 22A. Thereafter, a polysilicon film that is to be a gate electrode is formed on the film 22. COPYRIGHT: (C)2006,JPO&NCIPI
|
