DIELECTRIC ETCHING METHOD BY HIGH SUPPLY LOW IMPACT PLASMA GIVING HIGH ETCHING RATE

摘要

PROBLEM TO BE SOLVED: To provide an etching method giving an increase in etching rate while maintaining the allowable level of the quality of a product. SOLUTION: In at least some embodiments, the invention is a plasma etching method comprising steps of applying a gas mixture of CF4, N2, and Ar and forming high density low impact energy plasma. The high-density low impact energy plasma is formed by using high supply low bias electric power setting. The gas mixture can comprise H2, NH3, hydrofluorocarbon gas, and/or fluorocarbon gas. The hydrofluorocarbon gas can comprise CH2F2, CH3F, and/or CHF3. The fluorocarbon gas can comprise C4F8, C4F6, and/or C5F8. COPYRIGHT: (C)2006,JPO&NCIPI