| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a rinsing liquid that is effective for improving the yield of products by reducing surface defects, so-called defects, in a product, suppressing pattern collapse during water rinsing, imparting durability to the pattern against electron beam irradiation, and preventing a pattern from shrinking, in the process of forming a photoresist pattern by using lithography techniques, and that accelerates a dewatering rate and enhance production efficiency. <P>SOLUTION: The rinsing liquid for lithography comprises an aqueous solution containing a water-soluble nitrogen-containing heterocyclic compound. A resist pattern is formed by carrying out steps of: (A) applying a photoresist film on a substrate; (B) selectively exposing the photoresist film through a mask pattern; (C) heat treating the film after exposure; (D) alkali developing; and (E) treating the film with the above rinsing liquid for lithography. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
