| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photosensitive resin composition and a photoresist film very excellent in sensitivity, resolution, thin line adhesion and pattern forming property even under a low exposure condition. <P>SOLUTION: The photosensitive resin composition and the photoresist film contain a carboxylic polymer (A), an ethylenically unsaturated compound (B), a photopolymerization initiator (C), at least one compound (D) selected from 3,4-benzopyrene, perylene, naphtho[2,3-a]pyrene, dibenzo[b, def]chrysene and 9,10-diphenylanthracene, and a compound (E1) represented by formula (I) or a compound (E2) represented by formula (II). A resist pattern forming method using the photosensitive resin composition is also provided. In the formula (I), R<SP>1</SP>and R<SP>2</SP>each independently denote a 1-10C alkyl, a 6-20C aryl or the like; R<SP>7</SP>and R<SP>8</SP>each independently denote H, a 1-10C alkyl, a 6-20C aryl or the like; and X denotes a divalent group represented by a specific formula. In the formula (II), R<SP>1</SP>, R<SP>2</SP>, R<SP>7</SP>, R<SP>8</SP>and X have the same meanings as those in the formula (I). <P>COPYRIGHT: (C)2006,JPO&NCIPI |
