METHOD FOR READING NON-VOLATILE MEMORY CELL

摘要

PROBLEM TO BE SOLVED: To assure reliable reading.

SOLUTION: This method includes changing a read reference level for reading a group of memory cells as a function of changes in a threshold voltage distribution of a different group of memory cells. The changing step includes determining a history read reference level for correct reading of at least one history cell, selecting a memory read reference level according to a first read reference level and reading of a nonvolatile memory array cell associated with at least one history cell using the memory read reference level.

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