| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can mixedly mount low-voltage operative and high-voltage operating MOSFETs on the same semiconductor substrate, and can set threshold voltages appropriate to various circuit operations. SOLUTION: The semiconductor device is formed on a substrate, is of the same conductivity type and has the same gate insulation material, and is equipped with a plurality of MOSFETs, having gate insulation films with a film thickness out of several kinds of film thicknesses, while the gate electrode 9 for a MOSFET with a thin gate insulating film (a first gate insulating film) 6 is structured with a silicide 15a, and the gate electrode 10 for a MOSFET with a gate insulating film (a second gate insulating film) 5 that is thicker than the first one is structured with a silicide 7a formed on a polycrystal or amorphous material Si or SiGe7 and the polycrystal or amorphous Si or SiGe. An optimum gate electrode can be provided to each of low-voltage and high-voltage operating MOSFETs mounted on one semiconductor substrate in a mixed way, thus enabling a threshold voltage to be set that is suitable for various circuit operations. COPYRIGHT: (C)2006,JPO&NCIPI |
