| 摘要 |
PROBLEM TO BE SOLVED: To enable additional reduction of differences in processed forms in a surface. SOLUTION: A semiconductor device manufacturing apparatus comprises a reaction chamber 11 for plasma-processing a substrate 12 to be processed that is placed therein, introduction lines 13, 14 for introducing a processing gas into the reaction chamber, high frequency power systems 32, 34 for applying high frequency power to the processing gas in the reaction chamber to cause it to generate plasma, and exhaust lines 16, 17 for exhausting the gas in the reaction chamber. At least one of the plurality of exhaust lines is provided on the upper wall of the reaction chamber immediately above the substrate to be processed. COPYRIGHT: (C)2006,JPO&NCIPI
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