| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor apparatus which can suppress the disconnection of a gate silicide. SOLUTION: The method for manufacturing a semiconductor apparatus includes a step to form an insulating film 12 on a semiconductor substrate, a step to form an opening 13 on the insulating film 12, a step to form a gate oxide film 14 on the surface of the semiconductor substrate exposing on the bottom of the opening, a step to form a polysilicon film 15 on the entire surface in order to bury the opening, a step to form a photoresist 16 on the polysilicon film to cover an area including the opening, a step to anisotropically etch the polysilicon film and the insulating film while using the photoresist 16 as a mask so as to form a side wall covering the lower side wall of the gate electrode, a step to remove the photoresist, a step to form an extension area 17 by implanting ions to the semiconductor substrate from the oblique direction while using the gate electrode and the side wall as a mask and to form a source/drain area 18 by ion implantation from the vertical direction, and a step to form a metallic silicide film 20 on the surface of the gate electrode as well as the surface of the semiconductor substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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