发明名称 Wafer heating and temperature control by backside fluid injection
摘要 In one of the many embodiments, an apparatus for processing a substrate is provided which includes a substrate processing chamber where the substrate is positioned within the substrate processing chamber so the substrate at least partially separates the substrate processing chamber into a first chamber and a second chamber. The apparatus further includes a first chamber inlet configured to input a first fluid of a first temperature into the first chamber at a first pressure and a second chamber inlet configured to input a second fluid of a second temperature into the second chamber at a second pressure wherein the first pressure and the second pressure are substantially equal. The second temperature is capable of being utilized to manage substrate temperature.
申请公布号 US2006130762(A1) 申请公布日期 2006.06.22
申请号 US20040015968 申请日期 2004.12.17
申请人 LAM RESEARCH CORP. 发明人 MOORING BEN;PARKS JOHN;HYMES DIANE J.
分类号 C23C16/00 主分类号 C23C16/00
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