发明名称 Porous low-dielectric constant (k) thin film with controlled solvent diffusion
摘要 A porous low-dielectric constant thin film with controlled solvent diffusion into pores of the porous thin film. The porous thin film i s formed from a composition including a porogen containing at least one pi-pi interacting functional group, a thermostable matrix precursor, and a solvent dissolving the porogen and the matrix precursor. The porous thin film thus formed has mesopores not smaller than 10 nm in size and has a solvent diffusion rate not higher than 30 mum<SUP>2</SUP>/sec. Due to the presence of the large pores, the porous thin film can greatly inhibit solvent diffusion into the pores of the thin film, which is encountered during wet processes, without substantial changes in dielectric constant, elastic modulus and hardness depending on the porosity of the thin film.
申请公布号 US2006135633(A1) 申请公布日期 2006.06.22
申请号 US20050263867 申请日期 2005.11.02
申请人 SAMSUNG CORNING CO., LTD. 发明人 LEE KWANG H.;YIM JIN H.
分类号 C08J9/00;C08L63/00 主分类号 C08J9/00
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