| 摘要 |
PROBLEM TO BE SOLVED: To simultaneously secure low resistivity and reliability of wiring. SOLUTION: The system is provided with a substrate 110, a gate line provided with a gate electrode 124 formed on the substrate, a gate insulating film 140 formed on the gate line, a drain electrode 175 opposed to a data line and a source electrode provided with source electrodes 173 formed on the gate insulating film, a protective film 180 formed on the data line and drain electrode, and a pixel electrode 190 connected to the drain electrode. Cover layers 801, 803 containing Si are provided at least at one of the lower sections of the gate insulating film and protective film. This allows adhesion to be improved, thereby enabling the reduction of the wiring resistance. COPYRIGHT: (C)2006,JPO&NCIPI |
