发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To solve the problem, wherein a capacity element for cutting a noise signal arranged in an active-element input requires a large area including parts, such as wiring, that is required for forming the capacity element and obstructs miniaturization of a chip size in a microwave integrated circuit. SOLUTION: The capacity element, formed on the rear of a chip, has a structure connecting either of two electrodes for the capacity element directly under one terminal for a semiconductor device, and the capacity element directly under one terminal for the semiconductor device. The upper section of the plane of a semiconductor surface is coated with a gate metal, and a semiconductor substrate and active regions other than transistor active regions are removed from the rear surface. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006165248(A) 申请公布日期 2006.06.22
申请号 JP20040354007 申请日期 2004.12.07
申请人 RENESAS TECHNOLOGY CORP 发明人 OTA HIROSHI;UCHIYAMA HIROYUKI
分类号 H01L27/06;H01L21/331;H01L21/822;H01L21/8222;H01L27/04;H01L27/095;H01L29/737 主分类号 H01L27/06
代理机构 代理人
主权项
地址