FORMING METHOD AND EQUIPMENT OF INTERLAYER CONNECTION OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of performing a UV cure treatment without affecting a low-k film of a lower layer in multilevel interconnection technology of a semiconductor. SOLUTION: The method of forming a film multilayer connection structure on a semiconductor substrate using a plasma CVD equipment consists of a process of forming a low dielectric constant film on substrate, a process of curing by radiating UV (ultraviolet rays) to the low dielectric constant film, a process of laminating a UV blocking film, a process of laminating a next low dielectric constant film, and a process of curing by radiating the UV to the next low dielectric constant film, where the extinction coefficient of the UV blocking film to the wavelength of the radiated UV is 0.2 or more. COPYRIGHT: (C)2006,JPO&NCIPI