| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMOS image sensor and a method for forming the same, in which dark signals are minimized and a high-speed operation is possible. SOLUTION: A gate insulating film and a doped polysilicon film which are sequentially stacked on a substrate are patterned to form a transfer gate and a reset gate set apart from each other. A floating diffusion layer between the transfer gate and the reset gate, a light receiving element at a side of the transfer gate away from and opposite to the floating diffusion layer, and a source/drain region at a side of the reset gate away from and opposite to the floating diffusion layer, are formed. A protective insulating film and a mold layer are sequentially formed on an entire surface of the substrate, and the mold layer is planarized until the protective insulating film is exposed. The exposed protective insulating film is removed to further expose an upper surface of the gates. A selective silicidation process is carried out using a metal gate film to form a metal gate silicide on the exposed gate. In this case, the protective insulating film has the mold layer and an etching selection ratio. COPYRIGHT: (C)2006,JPO&NCIPI
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