| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a compound semiconductor single crystal, by which a good quality single crystal of GaAs, InP or the like can be grown, without bringing about polycrystallization or generating a crystalline defect by preventing melt of a raw material crystal from entering the gap between a seed crystal and a crucible when the crystal is grown by a vertical temperature gradient method or a vertical Bridgman method. SOLUTION: In the method for manufacturing the compound semiconductor single crystal by the vertical temperature gradient method or the vertical Bridgman method using the crucible made of pyrolytic boron nitride the surface of which is coated with a boron oxide thin film which is previously formed by heating the surface to a high temperature in air, a boron oxide sealant and the seed crystal are successively arranged in the seed crystal carrying section of the crucible and the raw material crystal is placed in the body section of the crucible. In that case, the amount used of the boron oxide sealant, which is melted at the time of growing the single crystal, is sufficient for the boron oxide sealant to substantially cover the seed crystal and to prevent the melt of the raw material crystal from entering the gap formed between the seed crystal and the seed crystal carrying section of the crucible. COPYRIGHT: (C)2006,JPO&NCIPI
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