| 摘要 |
PROBLEM TO BE SOLVED: To provide a pulling method for silicon single crystal which can prevent propagation of heat shock dislocation that occurs in the seed crystal to a product part and can safely pull a large diameter dislocation-free single crystal. SOLUTION: In a method for manufacturing silicon single crystal by Czochralski process in which rectifying gas is introduced into the main chamber, there is formed in a neck part an enlarged diameter part for enlarging the diameter of the neck part and a diameter reduced part for reducing the neck part, and the enlarged diameter part is cooled when the enlarged diameter part is formed. COPYRIGHT: (C)2006,JPO&NCIPI
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