发明名称 |
Nitride semiconductor light-emitting device and method for fabrication thereof |
摘要 |
An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained.
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申请公布号 |
US2006133442(A1) |
申请公布日期 |
2006.06.22 |
申请号 |
US20050311138 |
申请日期 |
2005.12.20 |
申请人 |
KONDOU MASAHUMI;KAMIKAWA TAKESHI;KAWAGUCHI YOSHINOBU |
发明人 |
KONDOU MASAHUMI;KAMIKAWA TAKESHI;KAWAGUCHI YOSHINOBU |
分类号 |
H01S5/00 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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