| 发明名称 |
Semiconductor substrate and its fabrication method |
| 摘要 |
To change a plurality of trenches to one flat empty space by two-dimensionally forming the trenches on the surface of a semiconductor substrate and then applying heat treatment to the semiconductor substrate.
|
| 申请公布号 |
US2006131651(A1) |
申请公布日期 |
2006.06.22 |
| 申请号 |
US20060340594 |
申请日期 |
2006.01.27 |
| 申请人 |
|
发明人 |
SATO TSUTOMU;MATSUO MIE;MIZUSHIMA ICHIRO;TSUNASHIMA YOSHITAKA;TAKAGI SHINICHI |
| 分类号 |
H01L27/12;G02B6/10;G02B6/12;G02B6/122;H01L21/00;H01L21/336;H01L21/76;H01L21/762;H01L21/764;H01L21/822;H01L21/8238;H01L21/8242;H01L21/84;H01L27/04;H01L27/08;H01L27/092;H01L27/10;H01L27/108;H01L29/06;H01L29/78;H01L29/786;H01L29/84 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
