| 摘要 |
A semiconductor memory device disclosed herein comprises: a memory cell array including memory blocks, each memory block including memory cells arranged in a matrix and the memory cell array including first select gate transistors to select one or more memory cells; a select gate line configured to input a control signal which controls continuity of the first select gate transistor to a gate of the first select gate transistor, the select gate line being shared between two adjacent memory blocks; and a row select circuit configured to select a memory block of a row designated by an input address signal, wherein the row select circuit comprises: only one transfer transistor provided between the select gate line and a non-select signal line to which a non-select signal is supplied, the non-select signal being the control signal indicating non-selection; and a select gate control circuit configured to bring the transfer transistor into conduction to supply the non-select signal to the select gate line when both the two adjacent memory blocks are not selected.
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